收藏本站
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
PM50CSD120
Intellimod? Module
Three Phase IGBT Inverter Output
50 Amperes/1200 Volts
Electrical and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Control Sector
Over Current Trip Level
(V D = 15V)
Short Circuit Trip Level
Over Current Delay Time
Over Temperature Protection (V D = 15V)
(Lower Arm)
Supply Circuit Under Voltage Protection
(-20 ≤ T j ≤ 125 ° C)
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Fault Output Current*
Minimum Fault Output Pulse Width*
OC
SC
t off(OC)
OT
OT R
UV
UV R
I D
V CIN(on)
V CIN(off)
I FO(H)
I FO(L)
t FO
T j = 25 ° C
T j = 125 ° C
-20 ° C ≤ T j ≤ 125 ° C, V D = 15V
V D = 15V
Trip Level
Reset Level
Trip Level
Reset Level
V D = 15V, V CIN = 15V, V N1 -V NC
V D = 15V, V CIN = 15V, V XP1 -V XPC
Applied between U P -V UPC , V P -V VPC ,
W P -V WPC , U N , V N , W N -V NC
V D = 15V, V CIN = 15V
V D = 15V, V CIN = 15V
V D = 15V
93
59
—
—
111
—
11.5
—
—
—
1.2
1.7
—
—
1.0
157
—
183
10
118
100
12.0
12.5
40
13
1.5
2.0
—
10
1.8
—
—
—
—
125
—
12.5
—
55
18
1.8
2.3
0.01
15
—
Amperes
Amperes
Amperes
μ S
° C
° C
Volts
Volts
mA
mA
Volts
Volts
mA
mA
mS
*Fault output is given only when the internal OC, SC, OT and UV protections schemes of either upper or lower arm device operate to protect it.
Thermal Characteristics
Characteristic
Junction to Case Thermal Resistance
Inverter Part
Contact Thermal Resistance
Symbol
R th(j-c)Q
R th(j-c)F
R th(j-c′)Q
R th(j-c′)F
R th(c-f)
Condition
Each IGBT
Each FWDi
Each IGBT**
Each FWDi**
Case to Fin Per Module,
Min.
—
—
—
—
—
Typ.
—
—
—
—
—
Max.
0.38
0.70
0.23 ?
0.36 ?
0.027
Units
° C/Watt
° C/Watt
° C/Watt
° C/Watt
° C/Watt
Thermal Grease Applied
**T C measured point is just under the chips.
? If you use this value, R th(f-a) should be measured just under the chips.
Recommended Conditions for Use
Characteristic
Supply Voltage
Control Supply Voltage***
Symbol
V CC
V D
Condition
Applied across P-N Terminals
Applied between V UP1 -V UPC ,
Value
0 ~ 800
15 ± 1.5
Units
Volts
Volts
V N1 -V NC , V VP1 -V VPC , V WP1 -V WPC
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Minimum Dead Time
V CIN(on)
V CIN(off)
f PWM
t DEAD
Applied between U P -V UPC , V P -V VPC ,
W P -V WPC , U N, V N , W N -V NC
Using Application Circuit
Input Signal
0 ~ 0.8
4.0 ~ V D
0 ~ 20
≥ 3.0
Volts
Volts
kHz
μ S
***With ripple satisfying the following conditions: dv/dt ≤ ± 5v/ μ s, Variation ≤ 2V peak to peak.
3
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
PM50RLA060 MOD IPM L-SER 7PAC 600V 50A
PM50RLA120 MOD IPM L-SER 7PAC 1200V 50A
PM50RLB060 MOD IPM L-SER 7PAC 600V 50A
PM50RLB120 MOD IPM L-SER 7PAC 1200V 50A
PM50RSA060 MOD IPM 7PAC 600V 50A
PM50RSA120 MOD IPM 7PAC 1200V 50A
PM50RSD060 MOD IPM 7PAC 600V 50A
PM50RSD120 MOD IPM 7PAC 1200V 50A
相关代理商/技术参数
PM50CSE060 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE FLAT-BASE TYPE INSULATED PACKAGE
PM50CSE120 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM50CSE120_05 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM50CTJ060-3 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:INSULATED PACKAGE FLAT-BASE TYPE
PM50CTK060 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM50RHA060 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
PM50RHA120 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT BASE TYPE INSULATED PACKAGE
PM50RHB060 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)